The novel stress simulation method for contemporary DRAM capacitor arrays

The increasing of aspect ratio in DRAM capacitors causes structural instabilities and device failures as the generation evolves. Conventionally, two-dimensional and three-dimensional models are used to solve these problems by optimizing thin film thickness, material properties and structure parameters; however, it is not enough to analyze the latest failures associated with large-scale DRAM capacitor arrays. Therefore, beam-shell model based on classical beam and shell theories is developed in this study to simulate diverse failures. It enables us to solve multiple failure modes concurrently such as supporter crack, capacitor bending, and storage-poly fracture.