DocumentCode :
1989662
Title :
3D-nHD: A HydroDynamic model for trap-limited conduction in a 3D network
Author :
Cappelli, A. ; Brunetti, R. ; Jacoboni, Carlo ; Piccinini, E. ; Xiong, F. ; Behnam, Ashkan ; Pop, Eric
Author_Institution :
Dept. of Phys., Math. & Comput. Sci., Univ. of Modena & Reggio Emilia, Modena, Italy
fYear :
2013
fDate :
3-5 Sept. 2013
Firstpage :
436
Lastpage :
439
Abstract :
Analytical models for trap-limited conduction have successfully been applied to the case of phase-change memory devices, providing an effective interpretation of the main chargetransport properties of chalcogenide materials. However they have been derived under the simplified hypothesis of one-dimensional continuum systems, and their extension to realistic geometries is anything but trivial. In this work we exploit a three-dimensional model for trap-limited conduction that makes use of a non-linear resistance network to implement the transport processes of the analytical models. Results correctly compare to experimental data and connect the transport properties to detailed microscopic information.
Keywords :
electron traps; hydrodynamics; phase change memories; 1D continuum systems; 3D model; 3D network; 3D-nHD; chalcogenide materials; charge transport; hydrodynamic model; nonlinear resistance network; phase change memory devices; trap-limited conduction; Hot carriers; Materials; Mathematical model; Phase change memory; Solid modeling; Switches; Three-dimensional displays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
ISSN :
1946-1569
Print_ISBN :
978-1-4673-5733-3
Type :
conf
DOI :
10.1109/SISPAD.2013.6650668
Filename :
6650668
Link To Document :
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