DocumentCode :
1989704
Title :
A process/device/circuit/system compatible simulation framework for poly-Si TFT based SRAM design
Author :
Chen-Wei Lin ; Chih-Hsiang Ho ; Chao Lu ; Chao, Mango C.-T ; Roy, Kaushik
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2013
fDate :
3-5 Sept. 2013
Firstpage :
440
Lastpage :
443
Abstract :
Operation characteristics of low temperature poly silicon thin-film transistor (LTPS-TFT) based systems vary significantly with design choices and parameters (i.e., process, device, circuit and system). Due to the lack of cross-layer simulation tool, conventional designs only optimize the design layers in isolation, leading to sub-optimal solutions. We present a cross-layer simulation framework for the design of LTPS-TFT Static Random Access Memory (SRAM). The proposed simulation framework optimizes design parameters considering the entire design space and hence, greatly reduces design complexity and efforts. The benefits of our proposed framework are illustrated by case studies.
Keywords :
SRAM chips; circuit simulation; elemental semiconductors; silicon; thin film transistors; SRAM design; Si; cross-layer simulation framework; isolation; low temperature poly silicon thin-film transistor; operation characteristics; polySi TFT; process/device/circuit/system compatible simulation framework; static random access memory; sub-optimal solutions; Grain size; Integrated circuit modeling; Random access memory; Semiconductor process modeling; Silicon; Thin film transistors; LTPS; SRAM; TFT; design optimization; poly-Si; yield estimation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
ISSN :
1946-1569
Print_ISBN :
978-1-4673-5733-3
Type :
conf
DOI :
10.1109/SISPAD.2013.6650669
Filename :
6650669
Link To Document :
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