A 1 million-cell 2.0-m/spl Omega/ 30-V TrenchFET utilizing 32 Mcell/in/sup 2/ density with distributed voltage clamping

Author

Williams, R.K. ; Grabowski, W. ; Darwish, M. ; Chang, M. ; Yilmaz, H. ; Owyang, K.

Author_Institution

Siliconix Inc., Santa Clara, CA, USA

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

363

Lastpage

366

Abstract

A new concept to control TrenchFET avalanche breakdown using an evenly distributed array of voltage clamps in a 1-of-n cell arrangement is introduced, improving on-resistance without sacrificing device ruggedness. Using this technique, a 32 Mcell/in/sup 2/ (5 Mcell/cm/sup 2/) 30-V N-channel TrenchFET with over 1 million active cells is reported having a die resistance of 2.0 m/spl Omega/ and a total packaged on-resistance of 3.1 m/spl Omega/. For V/sub GS/=10 V and a 20-V gate rating, a measured R/sub DS/A of 0.25 m/spl Omega/-cm/sup 2/ is 49% that of a previous-generation 12 Mcell/in/sup 2/ design. Empirically calibrated 3D device simulations illustrate that improved epitaxial current spreading accounts for 31% of the resistance reduction in this density range. TrenchFET avalanche current densities exceeding 950 A/cm/sup 2/ predicted by simulation are confirmed by unclamped inductive switching (UIS) measurements.

Keywords

avalanche breakdown; power MOSFET; 2.0 mohm; 30 V; 3D device simulation; N-channel TrenchFET; avalanche breakdown; die resistance; distributed voltage clamping; epitaxial current spreading; on-resistance; unclamped inductive switching; vertical power MOSFET; Avalanche breakdown; Breakdown voltage; Clamps; Current density; Current measurement; Density measurement; Electrical resistance measurement; Packaging; Predictive models; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650400

Filename

650400