DocumentCode :
19898
Title :
Dynamic Test Methods for COTS SRAMs
Author :
Tsiligiannis, G. ; Dilillo, L. ; Gupta, V. ; Bosio, A. ; Girard, P. ; Virazel, A. ; Puchner, H. ; Bosser, Alexandre ; Javanainen, Arto ; Virtanen, Ari ; Frost, Christopher ; Wrobel, F. ; Dusseau, L. ; Saigne, F.
Author_Institution :
Lab. d´Inf., de Robot. et de Microelectron. de Montpellier (LIRMM), Univ. de Montpellier II, Montpellier, France
Volume :
61
Issue :
6
fYear :
2014
fDate :
Dec. 2014
Firstpage :
3095
Lastpage :
3102
Abstract :
In previous works, we have demonstrated the importance of dynamic mode testing of SRAM components under ionizing radiation. Several types of failures are difficult to expose when the device is tested under static (retention) mode. With the purpose of exploring and defining the most complete testing procedures and reveal the potential hazardous behaviors of SRAM devices, we present novel methods for the dynamic mode radiation testing of SRAMs. The proposed methods are based on different word address accessing schemes and data background: Fast Row, Fast Column, Pseudorandom, Adjacent (Gray) and Inverse Adjacent (Gray). These methods are evaluated by heavy ion and atmospheric-like neutron irradiation of two COTS SRAMs of 90 nm and 65 nm technology.
Keywords :
SRAM chips; neutron effects; radiation hardening (electronics); COTS SRAM; SRAM devices; atmospheric-like neutron irradiation; data background; dynamic mode radiation testing; dynamic mode testing; dynamic test methods; heavy ion irradiation; ionizing radiation; size 65 nm; size 90 nm; static retention mode; word address accessing schemes; Ions; Neutrons; Radiation effects; Random access memory; Single event upsets; 65 nm; 90 nm; COTS; SRAMs; dynamic test; heavy ions; multiple cell upset (MCU); neutrons; single event upset (SEU);
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2014.2363123
Filename :
6940326
Link To Document :
بازگشت