Title :
A 3mW 8-Bit radiation-hardened-by-design DAC for ultra-wide temperature range from −180°C to 120°C
Author :
Chen, Zhenqi ; Dai, Fa Foster
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., Auburn, AL, USA
Abstract :
This paper presents an 8-bit low power digital to analog converter (DAC) with radiation-hardened-by-design (RHBD) for cryogenic applications. Implemented in a 0.5μm SiGe BiCMOS technology, this cryogenic DAC is capable of operating over an ultra-wide temperature (UWT) range from -180°C to +120°C and under high-energy particle radiation environment on the lunar surface. A segmented R-2R binary code with thermometer code architecture is used for the DAC core, and a quadrature layout is used to improve the matching. The DAC achieves a measured differential nonlinearity by integral nonlinearity (DNL/INL) of ±0.2/0.3 least-significant-bit (LSB) in 27°C and ±0.6/0.9 LSB in -180°C. It consumes only 1mA current and occupies only 0.25mm2 die area.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; binary codes; cryogenic electronics; digital-analogue conversion; low-power electronics; radiation hardening (electronics); semiconductor materials; thermometers; BiCMOS technology; DAC radiation-hardened-by-design; SiGe; cryogenic DAC; current 1 mA; differential nonlinearity; high-energy particle radiation environment; integral nonlinearity; least-significant-bit; low power digital to analog converter; lunar surface; power 3 mW; segmented R-2R binary code; size 0.5 mum; temperature -180 degC to 120 degC; thermometer code architecture; word length 8 bit; Cryogenics; Layout; NASA; Resistors; Silicon germanium; Transistors; DAC; RHBD; SiGe; UWT; cryogenic circuits;
Conference_Titel :
Circuits and Systems (ISCAS), 2011 IEEE International Symposium on
Conference_Location :
Rio de Janeiro
Print_ISBN :
978-1-4244-9473-6
Electronic_ISBN :
0271-4302
DOI :
10.1109/ISCAS.2011.5937736
