Title :
Efficiency droop improvement in InGaN/GaN light-emitting diodes by graded-composition electron blocking layer
Author :
Wang, C.H. ; Chang, W.T. ; Chang, S.P. ; Li, J.C. ; Kuo, H.C. ; Lu, T.C. ; Wang, S.C.
Author_Institution :
Dept. of Photonic, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
Aug. 28 2011-Sept. 1 2011
Abstract :
InGaN/GaN LED with a graded-composition electron blocking layer has superior hole injection and electron confinement by simulation. Experiment results demonstrated that such GEBL exhibited better electrical characteristics, and higher output power at high current density.
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; wide band gap semiconductors; InGaN-GaN; electron confinement; graded-composition electron blocking layer; high current density; hole injection; light-emitting diodes; Aluminum; Charge carrier processes; Current density; Gallium nitride; Light emitting diodes; Power generation; Transportation;
Conference_Titel :
Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011
Conference_Location :
Sydney, NSW
Print_ISBN :
978-1-4577-1939-4
DOI :
10.1109/IQEC-CLEO.2011.6193935
