• DocumentCode
    1990261
  • Title

    Improved I-V Characteristics of SiC MOSFETs by TCE Thermal Gate Oxidation

  • Author

    Yang, B.L. ; Lin, L.M. ; Xu, J.P. ; Lai, P.T.

  • Author_Institution
    department of Electrical and Electronic Engineering, The University of Hong, Hong, Hong Kong, E-mail: laip@eee.hku.hk
  • fYear
    2005
  • fDate
    19-21 Dec. 2005
  • Firstpage
    803
  • Lastpage
    806
  • Abstract
    The effects of TCE (trichloroethylene) thermal gate oxidation on the electrical characteristics of SiC MOSFETs are investigated. It is found that TCE thermal gate oxidation can improve the Id-Vdcharacteristics, increase the field-effect mobility, and reduce the threshold voltage and sub-threshold slope of the devices. The better device characteristics are believed to be attributed to the TCE-induced reductions of charges in the gate oxide and traps at the SiC/SiO2interface, and also to the gettering of charged impurities and reduction of physical defects by the chlorine incorporated in the gate oxide.
  • Keywords
    Electric variables; Electron mobility; Furnaces; Implants; MOSFETs; Oxidation; Silicon carbide; Temperature; Thermal conductivity; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
  • Print_ISBN
    0-7803-9339-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2005.1635399
  • Filename
    1635399
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1990261