DocumentCode
1990302
Title
Heterostructure PIN Rectifier Diode For Power Applications
Author
Mazhari, B. ; Sinha, M. ; Dixit, J.
Author_Institution
Department of Electrical Engineering, Indian Institute of technology, Kanpur, India, E-mail: baquer@iitk.ac.in
fYear
2005
fDate
19-21 Dec. 2005
Firstpage
807
Lastpage
810
Abstract
We propose use of heterostructures in PIN rectifiler diodes for obtaining faster switching speed. It is shown that by employing a small bandgap material in the heavily doped P layer and a wide bandgap material in the intrinsic region, reverse recovery time can be significantly lowered without compromising either the breakdown or the forward ON voltage.
Keywords
Breakdown voltage; Charge carrier lifetime; Current density; Photonic band gap; Radiative recombination; Rectifiers; Schottky diodes; Semiconductor devices; Semiconductor diodes; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN
0-7803-9339-2
Type
conf
DOI
10.1109/EDSSC.2005.1635400
Filename
1635400
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