All-polymer field effect transistors

Author

Schrodner, M. ; Sensfuss, S. ; Roth, H.-K. ; Stohn, R.-I. ; Clemens, W. ; Bernds, A.

Author_Institution

Thueringisches Inst. fuer Textil- und Kunststoff-Forschung e.V, Rudolstadt, Germany

fYear

2002

fDate

2002

Firstpage

188

Lastpage

190

Abstract

Polymer field effect transistors (PFETs) were made from polymeric semiconductors, insulators and electrodes on flexible polymeric substrates. The authors present recent results of all-polymer FETs with conjugated polymers like poly(3-alkylthiophenes) as active semiconducting material. Highly resolved electrodes were patterned by lithography of conducting polymers. The on/off ratios exceed 1000 by far. The logic capability of the PFETs could be demonstrated by the realisation of inverters.

Keywords

conducting polymers; insulated gate field effect transistors; photolithography; polymer films; semiconductor technology; IGFET; active semiconducting material; all-polymer FETs; conducting polymers; conjugated polymers; flexible polymeric substrates; highly resolved electrodes; inverters; lithography; logic capability; organic FETs; organic field effect transistors; poly(3-alkylthiophenes); polymer field effect transistors; polymeric electrodes; polymeric insulators; polymeric semiconductors; Conducting materials; Electrodes; FETs; Lithography; Plastic insulation; Polymers; Pulse inverters; Semiconductivity; Semiconductor materials; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Polymers and Adhesives in Microelectronics and Photonics, 2002. POLYTRONIC 2002. 2nd International IEEE Conference on

Print_ISBN

0-7803-7567-X

Type

conf

DOI

10.1109/POLYTR.2002.1020208

Filename

1020208