Title :
All-polymer field effect transistors
Author :
Schrodner, M. ; Sensfuss, S. ; Roth, H.-K. ; Stohn, R.-I. ; Clemens, W. ; Bernds, A.
Author_Institution :
Thueringisches Inst. fuer Textil- und Kunststoff-Forschung e.V, Rudolstadt, Germany
Abstract :
Polymer field effect transistors (PFETs) were made from polymeric semiconductors, insulators and electrodes on flexible polymeric substrates. The authors present recent results of all-polymer FETs with conjugated polymers like poly(3-alkylthiophenes) as active semiconducting material. Highly resolved electrodes were patterned by lithography of conducting polymers. The on/off ratios exceed 1000 by far. The logic capability of the PFETs could be demonstrated by the realisation of inverters.
Keywords :
conducting polymers; insulated gate field effect transistors; photolithography; polymer films; semiconductor technology; IGFET; active semiconducting material; all-polymer FETs; conducting polymers; conjugated polymers; flexible polymeric substrates; highly resolved electrodes; inverters; lithography; logic capability; organic FETs; organic field effect transistors; poly(3-alkylthiophenes); polymer field effect transistors; polymeric electrodes; polymeric insulators; polymeric semiconductors; Conducting materials; Electrodes; FETs; Lithography; Plastic insulation; Polymers; Pulse inverters; Semiconductivity; Semiconductor materials; Substrates;
Conference_Titel :
Polymers and Adhesives in Microelectronics and Photonics, 2002. POLYTRONIC 2002. 2nd International IEEE Conference on
Print_ISBN :
0-7803-7567-X
DOI :
10.1109/POLYTR.2002.1020208
