Title :
Investigation of MOS-NDR Voltage Controlled Ring Oscillator Fabricated by CMOS Process
Author :
Gan, Kwang-Jow ; Liang, Dong-Shong ; Hsiao, Chung-Chih ; Tsai, Cher-Shiung ; Chen, Yaw-Hwang
Author_Institution :
Department of Electronic Engineering, the Kun Shan University, Taiwan
Abstract :
A voltage-controlled ring oscillator (VCO) based on novel MOS-NDR circuit is described. This MOS-NDR circuit is made of metal-oxide-semiconductor emiconductor ield-effect-transistor ( MOS) devices that can exhibit the negative differential resistance (NDR) current-voltage characteristic by suitably arranging the MOS parameters. The VCO is constructed by three low-power ower MOS-NDR inverters. This novel VCO has a range of operation frequency from 38MHz to 162MHz. It consumes 24mW in its central frequency of 118MHz using a 2V power supply. This VCO is fabricated by 0.35μm CMOS process and occupy an area of 0.015 mm2.
Keywords :
CMOS process; Circuits; Frequency; Inverters; Logic devices; MOS devices; Ring oscillators; System-on-a-chip; Voltage control; Voltage-controlled oscillators;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635405
