Two-stage GaN HEMT based class-C pulsed amplifier for S-band radar applications

Author

Kashif, A. ; Azam, S. ; Mughal, F. ; Cheema, N.B. ; Imran, M.

Author_Institution

Centre of Excellence in Appl. Sci. & Technol. (CESAT), Islamabad, Pakistan

fYear

2015

fDate

13-17 Jan. 2015

Firstpage

560

Lastpage

563

Abstract

High performance amplifiers are always demanding in wireless communication. To amplify RF signal, power amplifier is considered as a heart source of the system. We have designed and developed a high performance two-stage pulsed class-C broadband PA for moderate range surveillance radar applications in the frequency range from 2.45 - 2.75 GHz. A common source configuration is used to deliver peak RF output power above 38 dBm. Hence, this amplifier can be used as driver amplifier for high power surveillance radar applications etc. The measured RF peak power of the amplifier is ~ 39 dBm.

Keywords

III-V semiconductors; driver circuits; gallium compounds; high electron mobility transistors; microwave amplifiers; power amplifiers; power measurement; pulse amplifiers; search radar; transistor circuits; wide band gap semiconductors; wideband amplifiers; GaN; HEMT; RF output power; RF signal; S-band radar applications; class-C pulsed amplifier; driver amplifier; frequency 2.45 GHz to 2.75 GHz; high power surveillance radar applications; power amplifier; pulsed class-C broadband PA; wireless communication; Broadband communication; Gallium nitride; HEMTs; Radar tracking; Radio frequency; Class-C; GaN; HEMT; S-band; amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Sciences and Technology (IBCAST), 2015 12th International Bhurban Conference on

Conference_Location

Islamabad

Type

conf

DOI

10.1109/IBCAST.2015.7058556

Filename

7058556