DocumentCode :
1990560
Title :
A 3.125 GHz four stage voltage controlled ring oscillator in 0.18 CMOS
Author :
Sánchez-Azqueta, C. ; Celma, S. ; Aznar, F.
Author_Institution :
Group of Electron. Design (GDE), Univ. of Zaragoza, Zaragoza, Spain
fYear :
2011
fDate :
15-18 May 2011
Firstpage :
1137
Lastpage :
1140
Abstract :
In this paper, a 3.125 GHz four stage voltage controlled ring oscillator is presented. The oscillator has been designed in a 0.18 μm CMOS process with a 1.8 V supply. Behavioural simulations predict an 18% tuning range for the oscillator, with a -91 dBc/Hz phase noise at a 1 MHz offset. Its power consumption has been simulated to be only 12.6 mW.
Keywords :
CMOS integrated circuits; microwave oscillators; phase noise; voltage-controlled oscillators; CMOS process; behavioural simulation; four stage voltage controlled ring oscillator; frequency 1 MHz; frequency 3.125 GHz; phase noise; power consumption; size 0.18 mum; tuning range; CMOS integrated circuits; Delay; Phase noise; Ring oscillators; Tuning; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2011 IEEE International Symposium on
Conference_Location :
Rio de Janeiro
ISSN :
0271-4302
Print_ISBN :
978-1-4244-9473-6
Electronic_ISBN :
0271-4302
Type :
conf
DOI :
10.1109/ISCAS.2011.5937771
Filename :
5937771
Link To Document :
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