DocumentCode
1991120
Title
High Real Estate Efficiency, Wideband Monolithic GaAs Amplifiers
Author
Pauker, Vlad ; Bru, Bernard ; Binet, Michel
Author_Institution
LABORATOIRES D´´ELECTRONIQUE ET DE PHYSIQUE APPLIQUEE 3, avenue Descartes, 94450 LIMEIL-BREVANNES, France
fYear
1984
fDate
10-13 Sept. 1984
Firstpage
773
Lastpage
776
Abstract
Small size wideband MMIC amplifiers of two types : high gain and low noise have been developed. DC coupling through the buffer stages have been used to avoid the MIM capacitors which take room and need a more complex technology. A real estate efficiency of 110 dB/mm2 has been achieved for high gain 0.1 to 4.5 GHz amplifiers and of 65 dB/mm2 for low noise DC to 1.7 GHz amplifiers.
Keywords
Broadband amplifiers; Coupling circuits; FETs; Frequency; Gallium arsenide; Impedance matching; Low-noise amplifiers; MMICs; Performance gain; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1984. 14th European
Conference_Location
Liege, Belgium
Type
conf
DOI
10.1109/EUMA.1984.333436
Filename
4132125
Link To Document