Title :
Influence of AlN quality on the transverse and longitudinal coupling coefficients of acoustic devices
Author :
Capilla, J. ; Clement, M. ; Olivares, J. ; Sangrador, J. ; Iborra, E.
Author_Institution :
Grupo de Microsistemas y Mater. Electronicos, Univ. Politec. de Madrid, Madrid, Spain
Abstract :
The transverse and longitudinal piezoelectric response of AlN polycrystalline thin films is analyzed by means of measurements in surface acoustic wave (SAW) and bulk acoustic wave (BAW) devices fabricated on films of identical characteristics. The crystal quality of the films is correlated with the measured coupling factors; it is found that the presence of grains with the c-axis tilted with respect to the substrate normal is detrimental to the piezoelectric response of AlN. However, the presence of tilted crystal affects differently the longitudinal and transverse response of the devices, degrading more severely the latter as the amount of tilted grains increases. The presence of such defects leads to the destruction of the mechanical coherence in the transverse deformation when the electric field parallel to the surface is applied.
Keywords :
aluminium compounds; bulk acoustic wave devices; crystal defects; crystal orientation; piezoelectric thin films; surface acoustic wave devices; AlN; AlN polycrystalline thin films; AlN quality effects; BAW devices; SAW devices; acoustic devices; bulk acoustic wave devices; coupling factors; crystal defects; film crystal quality; longitudinal coupling coefficients; longitudinal piezoelectric response; mechanical coherence destruction; surface acoustic wave devices; tilted crystal effects; transverse coupling coefficients; transverse deformation; transverse piezoelectric response; Acoustic devices; Acoustic measurements; Acoustic waves; Dielectric losses; Piezoelectric devices; Piezoelectric films; Piezoelectric materials; Surface acoustic wave devices; Surface acoustic waves; Thin film devices; BAW; Polycrystalline AlN; SAW; electromechanical coupling;
Conference_Titel :
Ultrasonics Symposium (IUS), 2009 IEEE International
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4389-5
Electronic_ISBN :
1948-5719
DOI :
10.1109/ULTSYM.2009.5441415