Two-photon luminescence study of optically trapped InP semiconductor nanowires

Author

Wang, Fan ; Paiman, Suriati ; Gao, Qiang ; Tan, H. Hoe ; Jagadish, C. ; Reece, Peter J.

Author_Institution

Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia

fYear

2011

fDate

Aug. 28 2011-Sept. 1 2011

Firstpage

221

Lastpage

223

Abstract

We report the two-photon luminescence emission (2PE) study of single indium phosphide (InP) semiconductor nanowire trapped in a gradient force optical tweezers. Nanowires studied were zinc blende, wurtzite or mixed phase crystal poly-types and ranged in length from 1 to 10 μm. Our results show that the band-edge emission from two-photon absorption of nanowires trapped in solution is strong and enhanced, compared with 2PE in InP bulk material. Besides, a distinct blue shift was observed between single-photon luminescence emission (1PE) spectra and 2PE spectra.

Keywords

III-V semiconductors; indium compounds; nanowires; photoluminescence; radiation pressure; semiconductor quantum wires; spectral line shift; 2PE spectra; InP; band-edge emission; blue shift; gradient force optical tweezers; mixed phase crystal poly-types; optically trapped indium phosphide semiconductor nanowires; size 1 mum to 10 mum; two-photon photoluminescence emission spectra; wurtzite phase; zinc blende phase; Charge carrier processes; Indium phosphide; Laser beams; Nanowires; Optical device fabrication; Optical polarization; Optical variables control;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011

Conference_Location

Sydney, NSW

Print_ISBN

978-1-4577-1939-4

Type

conf

DOI

10.1109/IQEC-CLEO.2011.6193994

Filename

6193994