Title :
The Effect of Profile Design, Bias Conditions and Load Impedance on Inter-Modulation Distortion in C-Band GaAs Power FETs
Author :
white, Paul M. ; Van Rees, Barteld ; Leonard, Michael F.
Author_Institution :
Raytheon Company, Special Microwave Devices Operation Bearfoot Road, Northborough, Massachusetts 01532
Abstract :
A comparison of the intermodulation distortion performance of FETs fabricated with flat, spike and 1/x3 type profiles showed that they differ most in their response to gate bias. The effect of load impedance is similar in the three cases and is closely related to its effect on gain compression. A statistical comparison of 43 devices confirmed that the spike profile offers a small but distinct linearity improvement over the other types.
Keywords :
Buffer layers; Electromagnetic heating; FETs; Fabrication; Gallium arsenide; Impedance; Intermodulation distortion; Linearity; Microwave devices; Transconductance;
Conference_Titel :
Microwave Conference, 1984. 14th European
Conference_Location :
Liege, Belgium
DOI :
10.1109/EUMA.1984.333451
