Title :
Estimation of the /spl Gamma/-X crossover composition in disordered (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P using n-i-n diodes
Author :
Morrison, A.P. ; Lambkin, J.D. ; van der Poel, C.J. ; Valster, A.
Author_Institution :
Nat. Microelectron. Res. Centre, Cork, Ireland
Abstract :
The conduction band offset between (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P and Ga/sub 0.5/In/sub 0.5/P has been determined from the I-V characteristics of n-i-n diodes fabricated from these materials. These measurements were made as a function of temperature for various aluminium compositions, x, thus providing an estimate of the /spl Gamma/-X crossover composition in the AlGaInP.
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; gallium compounds; indium compounds; interface states; semiconductor diodes; semiconductor lasers; (AlGa)/sub 0.5/In/sub 0.5/P; /spl Gamma/-X crossover composition; Al composition dependence; Ga/sub 0.5/In/sub 0.5/P; I-V characteristics; conduction band offset; disordered (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P; laser diodes; n-i-n diodes; Aluminum; Electron emission; Energy measurement; Gallium alloys; Laboratories; Microelectronics; Photonic band gap; Semiconductor diodes; Temperature; Thermionic emission;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650407
