DocumentCode
1991578
Title
Reducing in dark count rate using a dual-APDs balanced-capacitance self-differencing scheme for 1550 nm single photon detection applications
Author
Ho, Wen-Jeng ; Liu, Jheng-Jie ; Lin, Jhe-Min ; Lee, Yi-Yu ; Hsieh, Yi-Chia ; Tang, Hsuan-Ming
Author_Institution
Inst. of Electro-Opt. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan
fYear
2011
fDate
Aug. 28 2011-Sept. 1 2011
Firstpage
1972
Lastpage
1974
Abstract
Single-photon performances characterization of InGaAs/InP avalanche photodiodes (APDs) using a dual-APDs balanced-capacitance self-differencing operation was proposed. Small spike-noise and low discrimination-level were simultaneously achieved. Reducing in dark-count rate was also presented in the proposed scheme.
Keywords
III-V semiconductors; avalanche photodiodes; dark conductivity; gallium arsenide; indium compounds; photodetectors; InGaAs-InP; avalanche photodiodes; balanced capacitance self differencing scheme; dark count rate; discrimination level; dual-APD; single photon detection applications; spike noise; wavelength 1550 nm; Capacitance; Dark current; Indium gallium arsenide; Indium phosphide; Logic gates; Noise; Photonics;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011
Conference_Location
Sydney, NSW
Print_ISBN
978-1-4577-1939-4
Type
conf
DOI
10.1109/IQEC-CLEO.2011.6194012
Filename
6194012
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