Title :
Reducing in dark count rate using a dual-APDs balanced-capacitance self-differencing scheme for 1550 nm single photon detection applications
Author :
Ho, Wen-Jeng ; Liu, Jheng-Jie ; Lin, Jhe-Min ; Lee, Yi-Yu ; Hsieh, Yi-Chia ; Tang, Hsuan-Ming
Author_Institution :
Inst. of Electro-Opt. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan
fDate :
Aug. 28 2011-Sept. 1 2011
Abstract :
Single-photon performances characterization of InGaAs/InP avalanche photodiodes (APDs) using a dual-APDs balanced-capacitance self-differencing operation was proposed. Small spike-noise and low discrimination-level were simultaneously achieved. Reducing in dark-count rate was also presented in the proposed scheme.
Keywords :
III-V semiconductors; avalanche photodiodes; dark conductivity; gallium arsenide; indium compounds; photodetectors; InGaAs-InP; avalanche photodiodes; balanced capacitance self differencing scheme; dark count rate; discrimination level; dual-APD; single photon detection applications; spike noise; wavelength 1550 nm; Capacitance; Dark current; Indium gallium arsenide; Indium phosphide; Logic gates; Noise; Photonics;
Conference_Titel :
Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011
Conference_Location :
Sydney, NSW
Print_ISBN :
978-1-4577-1939-4
DOI :
10.1109/IQEC-CLEO.2011.6194012
