DocumentCode
1991780
Title
A low-power third-order ΔΣ modulator using a single operational amplifier
Author
Perez, Aldo Peña ; Bonizzoni, Edoardo ; Maloberti, Franco
Author_Institution
Dept. of Electron., Univ. of Pavia, Pavia, Italy
fYear
2011
fDate
15-18 May 2011
Firstpage
1371
Lastpage
1374
Abstract
An architecture for low-power ΔΣ modulators suitable for high-resolution portable sensor systems is presented. The circuit uses a single operational amplifier to achieve a third-order noise shaping. The two-stage op-amp employs a boosting technique that increases by 5 the slew-rate. The circuit, simulated at the transistor level using a conventional 0.18-μm CMOS technology, obtains a peak SNDR of 88 dB over an input signal bandwidth of 100 kHz. The simulated power consumption is 125 μW with a 1.5-V supply voltage. The achieved Figure of Merit (FoM) is 31 fJ/conversion-level.
Keywords
CMOS integrated circuits; delta-sigma modulation; low-power electronics; operational amplifiers; CMOS technology; bandwidth 100 kHz; figure of merit; high-resolution portable sensor systems; low-power third-order ΔΣ modulator; operational amplifier; power 125 muW; size 0.18 mum; third-order noise shaping; voltage 1.5 V; Ash; Bandwidth; Capacitors; Modulation; Noise; Power demand; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2011 IEEE International Symposium on
Conference_Location
Rio de Janeiro
ISSN
0271-4302
Print_ISBN
978-1-4244-9473-6
Electronic_ISBN
0271-4302
Type
conf
DOI
10.1109/ISCAS.2011.5937827
Filename
5937827
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