Title :
Millimeter Wave GaAs IMPATT Diodes
Author :
Massé, D. ; Adlerstein, M.G. ; Holway, L.H., Jr.
Abstract :
Amplifiers and oscillators, using gallium arsenide (GaAs) double-drift IMPATT diodes have become one of the leading solid-state contenders to replace electron tubes as power sources in millimeter wave systems. In this paper, we describe the state-of-the-art performance obtained in our laboratory through device and circuit modeling. Some results obtained at frequencies ranging from 20 to 94 GHz are shown.
Keywords :
Diodes; Electron tubes; Frequency; Gallium arsenide; Laboratories; Millimeter wave circuits; Oscillators; Power amplifiers; Power system modeling; Solid state circuits;
Conference_Titel :
Microwave Conference, 1985. 15th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.1985.333474
