• DocumentCode
    1991838
  • Title

    High Power, High Efficiency LP. MOCVD InP Gunn Diodes for 94GHz

  • Author

    di Forte-Poisson, M.A. ; Colomer, G. ; Brylinski, C. ; Duchemin, J.P. ; Azan, F. ; Lacombe, J.

  • Author_Institution
    Thomson-CSF. Domaine de Corbeville 91401 ORSAY
  • fYear
    1985
  • fDate
    9-13 Sept. 1985
  • Firstpage
    177
  • Lastpage
    182
  • Abstract
    High power and high efficiency InP Gunn diodes which were made from layers grown by LP-MOCVD have been developed in the millimeter-wave range. The Gunn diodes, processed using the integral heat sink technique have delivered up to 100 mw cw output power with 2,5% efficiency at 94GHz, while average power levels in excess of 90 mw were obtained at 94GHz. The Gunn diodes operated at a bulk temperature less than 200°C under maximum output power operating condition. The AM noise of the 94GHz Gunn oscillator was ¿140 dbc/Hz SSB at 10KHz from the carrier.
  • Keywords
    Amplitude modulation; Diodes; Gunn devices; Heat sinks; Indium phosphide; MOCVD; Millimeter wave technology; Oscillators; Power generation; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1985. 15th European
  • Conference_Location
    Paris, France
  • Type

    conf

  • DOI
    10.1109/EUMA.1985.333476
  • Filename
    4132164
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1991838