DocumentCode
1991939
Title
A radiation hardened by design charge pump for flash memories
Author
Bellotti, Giovanni ; Liberali, Valentino ; Stabile, Antonino ; Gregori, Stefano
Author_Institution
Dept. of Phys., Univ. degli Studi di Milano, Milan, Italy
fYear
2013
fDate
23-27 Sept. 2013
Firstpage
1
Lastpage
4
Abstract
This paper presents a charge pump voltage doubler for programming flash memories to be employed in space applications. The device has been designed in a commercial 180 nm CMOS technology using radiation hardening by design techniques. Radiation tests carried out on prototype samples demonstrate immunity to latch-up, and an adequate level of hardness with respect to total dose.
Keywords
CMOS memory circuits; charge pump circuits; flash memories; radiation hardening (electronics); space vehicle electronics; voltage multipliers; CMOS technology; charge pump design; charge pump voltage doubler; flash memory programming; radiation hardening; size 180 nm; space applications; Ash; CMOS integrated circuits; Capacitors; Charge pumps; Logic gates; MOSFET; Radiation hardening (electronics); Charge pump; flash memory; hardening by design; radiation effects;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location
Oxford
Type
conf
DOI
10.1109/RADECS.2013.6937373
Filename
6937373
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