Title :
Angled flip-flop single-event cross sections for submicron bulk CMOS technologies
Author :
Gaspard, N. ; Jagannathan, Sarangapani ; Diggins, Z. ; Reece, T. ; Wen, S.-J. ; Wong, Rita ; Lilja, K. ; Bounasser, M. ; Loveless, T.D. ; Holman, W.T. ; Bhuva, B.L. ; Massengill, Lloyd W.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Abstract :
Experimental angled heavy-ion single-event cross sections for hardened and unhardened flip-flops for technology nodes ranging from 28-nm to 130-nm are compared. Results show that hardened flip-flop cross sections increase at a faster rate with increasing angle of incidence than unhardened designs as technology scales. Hardened flip-flop cross section approaches unhardened flip-flop cross section for high incidence angular strikes, and surpasses unhardened flip-flop cross sections at 28-nm feature sizes.
Keywords :
CMOS logic circuits; flip-flops; radiation hardening (electronics); angled flip-flop single event cross sections; heavy-ion single event cross sections; submicron bulk CMOS technologies; unhardened flip-flops; CMOS integrated circuits; CMOS technology; Flip-flops; Ions; Layout; Robustness; Transistors; DICE flip-flop; flip-flop; hardened flip-flop; single-event cross section; single-event upset;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location :
Oxford
DOI :
10.1109/RADECS.2013.6937376
