A Fully Implanted 1 W, 18 GHz FET

The reliability of power FET´s is strongly affected by the local uniformity of the active layer. Therefore an implanted layer has been optimized for 2.4 mm power devices. The main features of the devices are a 0.7 um gate length, a 50 um unit gate width and a via-hole source grounding. An output power of 1 W at 18 GHz with 6 dB linear gain has been measured. This result is the best ever reported for implanted power devices, and demonstrates the potentiality of ion implantation for power FET´s production.