Title :
Extremely Low Noise and Low Temperature TEGFET Operation
Author :
Delagebeaudeuf, D. ; Delesculuse, P. ; Jay, P.R.
Author_Institution :
Thomson-CSF Microwave Components Division, Corbeville BP 10, Orsay 91401 France.
Abstract :
This paper presents a temperature dependent version of the expression used to describe the noise behaviour of a MESFET. By applying this to the TEGFET case it is possible to demonstrate the relative contributions of the different parameters to the low noise behaviour at temperatures below room temperature.
Keywords :
Costs; Equations; FETs; Gallium arsenide; HEMTs; Low-noise amplifiers; MESFETs; MODFETs; Operational amplifiers; Temperature sensors;
Conference_Titel :
Microwave Conference, 1985. 15th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.1985.333490
