• DocumentCode
    1992170
  • Title

    SOI floating-body, device and circuit issues

  • Author

    Gautier, J. ; Pelella, M.M. ; Fossum, J.G.

  • Author_Institution
    CEA, Centre d´Etudes Nucleaires de Grenoble, France
  • fYear
    1997
  • fDate
    10-10 Dec. 1997
  • Firstpage
    407
  • Lastpage
    410
  • Abstract
    This paper focuses on floating-body effects in MOSFETs and circuits on SOI substrates. We review different ways to coexist with these effects and particularly how to take advantage from them. It is shown that there is no blanket solution, but more a palette of approaches. Choosing the most appropriate one to a given application is addressed.
  • Keywords
    CMOS integrated circuits; MOSFET; isolation technology; leakage currents; silicon-on-insulator; transient analysis; MOSFET; NMOSFET; SOI substrates; SOI/CMOS; circuit issues; drain conductance; field shield isolation technology; floating-body effects; partially depleted devices; transient leakage current; Delay; Fabrication; Immune system; Leakage current; MOSFET circuits; Microelectronics; Pulse measurements; Research and development; Substrates; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
  • Conference_Location
    Washington, DC, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-4100-7
  • Type

    conf

  • DOI
    10.1109/IEDM.1997.650411
  • Filename
    650411
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1992170