Title :
SOI floating-body, device and circuit issues
Author :
Gautier, J. ; Pelella, M.M. ; Fossum, J.G.
Author_Institution :
CEA, Centre d´Etudes Nucleaires de Grenoble, France
Abstract :
This paper focuses on floating-body effects in MOSFETs and circuits on SOI substrates. We review different ways to coexist with these effects and particularly how to take advantage from them. It is shown that there is no blanket solution, but more a palette of approaches. Choosing the most appropriate one to a given application is addressed.
Keywords :
CMOS integrated circuits; MOSFET; isolation technology; leakage currents; silicon-on-insulator; transient analysis; MOSFET; NMOSFET; SOI substrates; SOI/CMOS; circuit issues; drain conductance; field shield isolation technology; floating-body effects; partially depleted devices; transient leakage current; Delay; Fabrication; Immune system; Leakage current; MOSFET circuits; Microelectronics; Pulse measurements; Research and development; Substrates; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650411
