Title :
SET tolerance of 65 nm CMOS majority voters: A comparative study
Author :
Danilov, Igor A. ; Gorbunov, Maxim S. ; Antonov, A.A.
Author_Institution :
Sci. Res. Inst. of Syst. Anal., Moscow, Russia
Abstract :
We study the design of different majority voters based on a commercial 65 nm CMOS technology, propose the test system and discuss the experimental results of heavy ion irradiation campaign and the proposed relative efficiency criterion for choosing the voter for a given TMR strategy.
Keywords :
CMOS integrated circuits; radiation hardening (electronics); CMOS majority voters; SET tolerance; TMR strategy; heavy ion irradiation campaign; single-event transient; size 65 nm; triple-modular redundancy technique; CMOS integrated circuits; Fault tolerance; Field programmable gate arrays; Flip-flops; Registers; Sensitivity; Tunneling magnetoresistance; CMOS; DICE; SET; TMR; critical charge; heavy ions; majority voter;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location :
Oxford
DOI :
10.1109/RADECS.2013.6937384
