A Highly Linear Broadband CMOS LNA with Noise Cancellation

Author

Chen, Pang-Hsing ; Yang, Jeng-Rern

Author_Institution

Dept. of Commun. Eng., Yuan Ze Univ., Jhongli, Taiwan

fYear

2012

fDate

27-30 May 2012

Firstpage

1

Lastpage

4

Abstract

A broadband low-noise amplifier (LNA) design that utilizes simultaneous noise and distortion cancellation is presented. The proposed LNA utilizes a PMOS and individual stages with common-gate and common-source cascade for second-order and third-order distortion cancellation. The LNA IIP3 is limited by the second-order interaction between the common source and common gate stages. The LNA is designed using standard 0.18μm CMOS technology. The LNA achieves S21 of 12.1 dB and the NF is lower than 3.1 dB over 0.7-2.5GHz. The IIP3 is +8dBm at 1.5GHz.

Keywords

CMOS analogue integrated circuits; low noise amplifiers; noise; wideband amplifiers; CMOS technology; LNA IIP3; PMOS; broadband low-noise amplifier design; common-gate cascade; common-source cascade; distortion cancellation; frequency 0.7 GHz to 2.5 GHz; frequency 1.5 GHz; highly linear broadband CMOS LNA; noise cancellation; second-order distortion cancellation; second-order interaction; size 0.18 mum; third-order distortion cancellation; Bandwidth; Broadband communication; CMOS integrated circuits; Linearity; Noise cancellation; Nonlinear distortion;

fLanguage

English

Publisher

ieee

Conference_Titel

Engineering and Technology (S-CET), 2012 Spring Congress on

Conference_Location

Xian

Print_ISBN

978-1-4577-1965-3

Type

conf

DOI

10.1109/SCET.2012.6342110

Filename

6342110