DocumentCode
1992237
Title
Experimental investigation on a new strain gauge realized by a semiconductor active device
Author
Annino, Angelo ; Cavallaro, Calogero ; Riciti, A.
Author_Institution
Inst. of Phys., Catania Univ., Italy
fYear
1998
fDate
2-4 Mar 1998
Firstpage
361
Lastpage
365
Abstract
Strain gauges based on resistance variation of a metallic alloy are well suited for stress measurements. The main drawback of such transducers is the need of a high gain voltage amplifier that increases the whole cost. In this paper an active device, a vertical MOSFET (DMOS), is experimentally investigated in order to verify the potential and feasibility of a new transducer, for stress measurements, based on a low cost component suitable for use without voltage amplifiers
Keywords
MOSFET; strain gauges; stress measurement; DMOS; resistance variation; semiconductor active device; strain gauge; stress measurements; vertical MOSFET; Capacitive sensors; Costs; MOSFET circuits; Piezoresistance; Stress measurement; Surface resistance; Temperature sensors; Testing; Transducers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Devices, Circuits and Systems, 1998. Proceedings of the 1998 Second IEEE International Caracas Conference on
Conference_Location
Isla de Margarita
Print_ISBN
0-7803-4434-0
Type
conf
DOI
10.1109/ICCDCS.1998.705864
Filename
705864
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