DocumentCode
1992419
Title
Mode-locked Yb-doped fiber laser with epitaxial graphene grown on 6H-SiC substrates
Author
Liu, Jiang ; Wei, Rusheng ; Wang, Ke ; Xu, Xiangang ; Wang, Pu
Author_Institution
Inst. of Laser Eng., Beijing Univ. of Technol., Beijing, China
fYear
2011
fDate
Aug. 28 2011-Sept. 1 2011
Firstpage
50
Lastpage
51
Abstract
Graphene epitaxially grown on 6H-SiC substrates by thermal decomposition was used as saturable absorbers for mode-locking of ytterbium-doped fiber lasers. Stable picosecond 19 nJ pulse centered at 1035 nm was generated at 1.05 MHz repetition rate.
Keywords
epitaxial growth; fibre lasers; graphene; laser mode locking; optical saturable absorption; silicon compounds; wide band gap semiconductors; ytterbium; energy 19 nJ; epitaxial growth; frequency 1.05 MHz; graphene; mode-locked fiber laser; saturable absorbers; thermal decomposition; wavelength 1035 nm; Fiber lasers; Laser mode locking; Optical fiber couplers; Optical fiber devices; Optical fiber polarization; Pump lasers; Silicon carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011
Conference_Location
Sydney, NSW
Print_ISBN
978-1-4577-1939-4
Type
conf
DOI
10.1109/IQEC-CLEO.2011.6194052
Filename
6194052
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