A Highly Efficient 24 GHz GaAs MESFET Oscillator

An accurate synthesis method is described for designing GaAs MESFET oscillators, which needs no complex large signal characterisation of the device. A graphic derived from a formula approximating the saturation characteristic of GaAs MESFET helps compute expected oscillator output power. It is assumed, that only |S21| is affected at large signal levels. The embedding networks are computed using the theory of maximally loaded output. The method was applied, to the design of a 24.4 GHz GaAs Mesfet varactor tuned oscillator that exhibited, output tpower greater than 12 dBm with an effie iency of 30%, the tuning range was ±350 MHz (¿P <. 5 dB).