Title :
Radiation effect in CMOS microprocessor exposed to intense mixed neutron and gamma radiation field
Author :
Jin Xiaoming ; Ma Qiang ; Qi Chao ; Yang Shanchao ; Li Ruibin ; Bai Xiaoyan ; Liu Yan ; Wang Guizhen ; Lin Dongsheng ; Chen Wei ; Ding Lili
Author_Institution :
Northwest Inst. of Nucl. Technol., Xi´an, China
Abstract :
Radiation effects of microprocessor in mixed neutron and gamma rays radiation field were researched. The ionizing energy deposited by neutron in Geant4 simulation accords with experimental data. Qualitative correlation is demonstrated between transistors and circuit.
Keywords :
CMOS digital integrated circuits; gamma-ray effects; microprocessor chips; neutron effects; CMOS microprocessor; Geant4 simulation; gamma rays radiation field; intense mixed neutron-gamma radiation field; ionizing energy; radiation effect; CMOS integrated circuits; Degradation; Gamma-rays; Microprocessors; Neutrons; Pulse width modulation; Radiation effects; gamma irradiation; microprocessor; neutron irradiation; total ionizing dose effect;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location :
Oxford
DOI :
10.1109/RADECS.2013.6937406
