Site-controlled In(Ga)As quantum dots with narrow emission linewidth for integration into nanophotonic devices

Author

Huggenberger, Alexander ; Schneider, Christian ; Heindel, Tobias ; Kamp, Martin ; Reitzenstein, Stephan ; Hofling, S. ; Worschech, Lukas ; Forchel, Alfred

Author_Institution

Wilhelm Conrad Rontgen-Center for Complex Mater. Syst., Univ. Wurzburg, Wurzburg, Germany

fYear

2011

fDate

Aug. 28 2011-Sept. 1 2011

Firstpage

216

Lastpage

218

Abstract

Site-controlled In(Ga)As quantum dots (QD) were grown by molecular beam epitaxy on pre-patterned GaAs (001) substrates and integrated into optical resonators. The emission linewidth of single site-controlled QDs was probed using a standard micro-photoluminescence setup and exhibits values down to 38 μeV. We find a typical fine structure splitting of ~32 μeV. Both values are comparable to self-assembled QDs.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; nanophotonics; photoluminescence; semiconductor quantum dots; In(Ga)As; electron volt energy 32 mueV; electron volt energy 38 mueV; molecular beam epitaxy; nanophotonic devices; narrow emission linewidth; optical resonators; pre-patterned substrates; site-controlled quantum dots; standard micro-photoluminescence setup; Cavity resonators; Gallium arsenide; Optical device fabrication; Optical polarization; Optical resonators; Quantum dots; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011

Conference_Location

Sydney, NSW

Print_ISBN

978-1-4577-1939-4

Type

conf

DOI

10.1109/IQEC-CLEO.2011.6194065

Filename

6194065