Impact of mechanical strain on the charge collection mechanisms of nanometer scaled SOI devices under heavy ion and pulsed laser irradiation

Author

Gaillardin, M. ; Raine, M. ; Duhamel, O. ; Girard, S. ; Paillet, P. ; McMorrow, Dale ; Warner, Jeffrey H. ; Andrieu, F. ; Barraud, S. ; Faynot, O.

Author_Institution

DAM, CEA, Arpajon, France

fYear

2013

fDate

23-27 Sept. 2013

Firstpage

1

Lastpage

7

Abstract

We investigate the impact of performance boosters using mechanical stress on the Single-Event Transient (SET) response of nanometer scaled Fully-Depleted Silicon-On-Insulator (SOI) devices. Heavy ion-induced charge collection mechanisms are analyzed through the measurement of fast transients on dedicated test structures processed either on standard relaxed or bi-axially tensile strained SOI substrates.

Keywords

internal stresses; nanoelectronics; radiation hardening (electronics); semiconductor device testing; transient response; SET response; Si; heavy ion-induced charge collection mechanisms; mechanical strain; mechanical stress; nanometer scaled SOI devices; nanometer scaled fully-depleted silicon-on-insulator devices; pulsed laser irradiation; single-event transient response; tensile strained SOI substrates; Lasers; Logic gates; Performance evaluation; Silicon; Strain; Transient analysis; Transistors; Fully Depleted (FD); SOI; Single-Event Effects (SEE); Single-Event Transient (SET); charge collection; heavy ion; mechanical stress; pulsed laser; strained silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on

Conference_Location

Oxford

Type

conf

DOI

10.1109/RADECS.2013.6937409

Filename

6937409