DocumentCode
1992792
Title
Study of SEL and SEU in SRAM using different laser techniques
Author
Savchenkov, Dmitriy V. ; Chumakov, Alexander I. ; Petrov, Andrey G. ; Pechenkin, Alexander A. ; Egorov, Andrey N. ; Mavritskiy, Oleg B. ; Yanenko, Andrey V.
Author_Institution
Dept. of Electron., Nat. Nucl. Res. Univ. “MEPhI”, Moscow, Russia
fYear
2013
fDate
23-27 Sept. 2013
Firstpage
1
Lastpage
5
Abstract
Single event upset (SEU) and single event latchup (SEL) laser testing results of SRAM CY62256 using both focused and local laser irradiation techniques are presented. Variable laser wavelength was used for SEU and SEL threshold linear energy transfer (LET) estimation. The backside laser irradiation technique was also applied. Laser testing results were compared to heavy ion testing ones.
Keywords
SRAM chips; radiation hardening (electronics); CY62256; SEL; SEU; SRAM; laser irradiation techniques; laser techniques; laser testing; single event latchup; single event upset; Integrated circuits; Laser beams; Lasers; Radiation effects; Random access memory; Single event upsets; Testing; SEL; SEU; heavy ion testing; laser technique;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location
Oxford
Type
conf
DOI
10.1109/RADECS.2013.6937411
Filename
6937411
Link To Document