DocumentCode :
1992792
Title :
Study of SEL and SEU in SRAM using different laser techniques
Author :
Savchenkov, Dmitriy V. ; Chumakov, Alexander I. ; Petrov, Andrey G. ; Pechenkin, Alexander A. ; Egorov, Andrey N. ; Mavritskiy, Oleg B. ; Yanenko, Andrey V.
Author_Institution :
Dept. of Electron., Nat. Nucl. Res. Univ. “MEPhI”, Moscow, Russia
fYear :
2013
fDate :
23-27 Sept. 2013
Firstpage :
1
Lastpage :
5
Abstract :
Single event upset (SEU) and single event latchup (SEL) laser testing results of SRAM CY62256 using both focused and local laser irradiation techniques are presented. Variable laser wavelength was used for SEU and SEL threshold linear energy transfer (LET) estimation. The backside laser irradiation technique was also applied. Laser testing results were compared to heavy ion testing ones.
Keywords :
SRAM chips; radiation hardening (electronics); CY62256; SEL; SEU; SRAM; laser irradiation techniques; laser techniques; laser testing; single event latchup; single event upset; Integrated circuits; Laser beams; Lasers; Radiation effects; Random access memory; Single event upsets; Testing; SEL; SEU; heavy ion testing; laser technique;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location :
Oxford
Type :
conf
DOI :
10.1109/RADECS.2013.6937411
Filename :
6937411
Link To Document :
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