Title :
A compact Schottky body contact technology for SOI transistors
Author :
Sleight, J. ; Mistry, K.
Author_Institution :
Digital Equipment Corp., Hudson, MA, USA
Abstract :
A self-aligned Schottky diode method for body contacting partially depleted silicon-on-insulator transistors applicable to technologies that incorporate silicide cladded junctions is presented. The Schottky body contacted transistor requires no extra manufacturing steps, uses the same or less area than a transistor using other body contacting schemes and allows bi-directional operation.
Keywords :
MOS integrated circuits; Schottky diodes; integrated circuit design; masks; silicon-on-insulator; SOI transistors; Schottky body contact technology; bi-directional operation; partially depleted silicon-on-insulator transistors; self-aligned Schottky diode method; silicide cladded junctions; Bidirectional control; Circuits; Cobalt; Implants; MOSFETs; Manufacturing; Schottky diodes; Silicides; Silicon on insulator technology; Stress;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650414
