Title :
CAD Formulas for Modelling the Interconnections of Fast GaAs Integrated Circuits
Author :
Chilo, J. ; Angenieux, G. ; Razban, T.
Author_Institution :
Laboratoire d´´Electromagn?tisme - ENSERG, 23 avenue des Martyrs - 38031 GRENOBLE C?dex - FRANCE.
Abstract :
The capacitance and inductance matrices for a set of interconnecting lines are computed using the moment method. Capacitance matrix [C] is obtained by inverting the potential matrix [P], whose terms are calculated from the multiple reflections theory to take into account the interface Air-GaAs. By an approximate formulation, we obtain simple analytical relations to calculate the coefficients of [C] and [L]. For GaAs technology, considering the semi-insulator like a perfect dielectric, these CAD relations give the coefficients of [C] and [L] with an accuracy better than a few percents.
Keywords :
Capacitance; Dielectrics; Equations; Gallium arsenide; Inductance; Integrated circuit interconnections; Integrated circuit modeling; Moment methods; Numerical analysis; Reflection;
Conference_Titel :
Microwave Conference, 1985. 15th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.1985.333529