DocumentCode
1992975
Title
A generic 2.0 × 2.5 mm2 UMTS FBAR duplexer based on 8-pole near-elliptic filters
Author
Bradley, P. ; Ye, S. ; Kim, J. ; Kim, J.H. ; Wang, K. ; Ko, H. ; Xie, Y.
Author_Institution
Wireless Semicond. Div., Avago Technol., San Jose, CA, USA
fYear
2009
fDate
20-23 Sept. 2009
Firstpage
839
Lastpage
842
Abstract
UMTS antenna duplexers for handsets require high levels of wide-band rejection while still achieving high isolation, low insertion loss, and good return loss in-band. Several of the UMTS duplexers also require very steep filter skirts due to a very small guardband between transmit (Tx) and receive (Rx) frequency bands (Bands 2 and 8 have ~1% guardband). Without sizeable inductors to stretch the bandwidth, this demands a higher effective coupling coefficient and a near-ideal placement of a large number of poles and zeroes to achieve steep filter skirts while maintaining acceptable insertion loss with so many resonators. Signifcantly higher quality factor (Q) than previously available is essential to maintain good insertion loss in these designs. Cross-coupling elements shift the frequency of existing ladder filter zeroes to place them near ideal alignment to meet in-band rejection requirements without the need for tight tolerance on components.
Keywords
3G mobile communication; acoustic resonators; bulk acoustic wave devices; mobile handsets; 8-pole near elliptic filter; UMTS FBAR duplexer; frequency shift; handset; insertion loss; quality factor; resonator; wide band rejection; 3G mobile communication; Band pass filters; Film bulk acoustic resonators; Inductors; Insertion loss; Passband; Q factor; Radio frequency; Resonator filters; Shunt (electrical); FBAR; RF filters; UMTS; duplexers; elliptic filters; handsets; piezoelectric;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium (IUS), 2009 IEEE International
Conference_Location
Rome
ISSN
1948-5719
Print_ISBN
978-1-4244-4389-5
Electronic_ISBN
1948-5719
Type
conf
DOI
10.1109/ULTSYM.2009.5441493
Filename
5441493
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