Title :
A generic 2.0 × 2.5 mm2 UMTS FBAR duplexer based on 8-pole near-elliptic filters
Author :
Bradley, P. ; Ye, S. ; Kim, J. ; Kim, J.H. ; Wang, K. ; Ko, H. ; Xie, Y.
Author_Institution :
Wireless Semicond. Div., Avago Technol., San Jose, CA, USA
Abstract :
UMTS antenna duplexers for handsets require high levels of wide-band rejection while still achieving high isolation, low insertion loss, and good return loss in-band. Several of the UMTS duplexers also require very steep filter skirts due to a very small guardband between transmit (Tx) and receive (Rx) frequency bands (Bands 2 and 8 have ~1% guardband). Without sizeable inductors to stretch the bandwidth, this demands a higher effective coupling coefficient and a near-ideal placement of a large number of poles and zeroes to achieve steep filter skirts while maintaining acceptable insertion loss with so many resonators. Signifcantly higher quality factor (Q) than previously available is essential to maintain good insertion loss in these designs. Cross-coupling elements shift the frequency of existing ladder filter zeroes to place them near ideal alignment to meet in-band rejection requirements without the need for tight tolerance on components.
Keywords :
3G mobile communication; acoustic resonators; bulk acoustic wave devices; mobile handsets; 8-pole near elliptic filter; UMTS FBAR duplexer; frequency shift; handset; insertion loss; quality factor; resonator; wide band rejection; 3G mobile communication; Band pass filters; Film bulk acoustic resonators; Inductors; Insertion loss; Passband; Q factor; Radio frequency; Resonator filters; Shunt (electrical); FBAR; RF filters; UMTS; duplexers; elliptic filters; handsets; piezoelectric;
Conference_Titel :
Ultrasonics Symposium (IUS), 2009 IEEE International
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4389-5
Electronic_ISBN :
1948-5719
DOI :
10.1109/ULTSYM.2009.5441493