DocumentCode :
1993041
Title :
Investigation of Some Guiding Structures for Low-Noise FET Amplifiers
Author :
Angelov, I. ; Spasov, A. ; Stoev, I. ; Urshev, L.
Author_Institution :
Institute of Electronics, Bulgarian Academy of Sciences, boul. Lenin 72, Sofia 1784
fYear :
1985
fDate :
9-13 Sept. 1985
Firstpage :
535
Lastpage :
540
Abstract :
The characteristics of low-noise amplifiers using various guiding structures have been investigated. A 0.15-0.20 dB improvement over the conventional microstrip amplifiers has been achieved at 48Hz with coplanar structures. Minimum noise temperatures of 45K and 10-12 K have been obtained at room and Iiquid nitrogen temperatures respectively. A two stage amplifier was realized at 198Hz exhtbiting a gain of 13-14 dB and 3 dB noise at room temperatures.
Keywords :
Acoustic reflection; Capacitors; Equivalent circuits; FETs; Low-noise amplifiers; Microstrip; Nitrogen; Noise figure; Noise measurement; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1985. 15th European
Conference_Location :
Paris, France
Type :
conf
DOI :
10.1109/EUMA.1985.333533
Filename :
4132221
Link To Document :
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