Many-body model for single-mode laser operations in semiconductor microcavities

Nonequilibrium steady states of single-mode laser operations are determined based on a many-body model for semiconductor microcavities above the lasing threshold. The physics of gain saturation is taken into account, and the kinetic hole burning is found for the distribution functions of carriers whose position in the momentum space depends on the carrier temperatures. Since the Coulomb enhancement of the many-body gain is sensitive to carrier temperature, besides the input-output characteristics, the linear stability of the laser operations is also affected by the temperatures.