Total ionizing dose tolerance of the resistance switching of Ag-Ge4oSeo based Programmable Metallization Cells

Programmable Metallization Cells (PMC) are two-terminal elements that exhibit resistance switching which is based on the combination of bias dependent ion conduction through a solid-state electrolyte and reduction/oxidation (redox) reactions occurring at the electrode terminals. PMC based resistive random access memory (ReRAM) is currently used in emerging nonvolatile memory technologies and has the potential to be the successor of current flash memory technology. In this study we demonstrate the radiation tolerance of Ag-doped Ge₄₀S₆₀ based PMC elements that were irradiated up to a total ionizing dose (TID) of 10 Mrad(Ge₄₀S₆₀) using ⁶⁰Co gamma rays. The irradiated devices show no significant degradation in the resistance switching.