Multiple-Cell-Upsets on a commercial 90nm SRAM in dynamic mode

Author

Tsiligiannis, G. ; Dilillo, L. ; Bosio, A. ; Girard, P. ; Pravossoudovitch, S. ; Todri, A. ; Virazel, A. ; Frost, Christopher ; Wrobel, F. ; Saigne, F.

Author_Institution

Lab. d´Inf., de Robot. et de Microelectron. de Montpellier (LIRMM), Univ. de Montpellier II, Montpellier, France

fYear

2013

fDate

23-27 Sept. 2013

Firstpage

1

Lastpage

4

Abstract

Downscaling of devices increases the Multiple-Cell-Upset (MCU) cross section of SRAMs making them an important threat for the robustness of systems. In this paper, we present different types of MCUs as they were recorded during atmospheric-like neutron irradiation experiments, during which a commercial 90nm SRAM was tested in dynamic mode. This study shows that when the memory is in dynamic mode, not only the typical MCU that involve a few flipped cells may appear but also, large clusters of upsets are possible to occur with hundreds of cells being affected. We identify different patterns of MCUs and categorize them according to their shapes and sizes.

Keywords

SRAM chips; neutron effects; radiation hardening (electronics); MCU cross section; atmospheric-like neutron irradiation experiments; commercial SRAM; dynamic mode; flipped cells; multiple-cell-upsets; size 90 nm; Heuristic algorithms; Neutrons; Radiation effects; Random access memory; Shape; Stress; Testing; Multiple Cell Upsets (MCU); SRAM; dynamic mode; neutron irradiation;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on

Conference_Location

Oxford

Type

conf

DOI

10.1109/RADECS.2013.6937429

Filename

6937429