Sinusoidal current operation of delay time compensation for parallel connected IGBTs

Author

Alvarez, Rodrigo ; Bernet, Steffen

Author_Institution

Power Electron. Lab., Tech. Univ. Dresden, Dresden, Germany

fYear

2012

fDate

15-20 Sept. 2012

Firstpage

3942

Lastpage

3949

Abstract

The parallel connection of IGBTs is being applied in various low and medium voltage converters. The selection of the devices, the manual parameterization of gate units and the substantial device de-rating are substantial disadvantages of state of the art converters with parallel connected IGBTs. A new, low expensive and automated delay time compensation method without additional current measurements was introduced in [1]. This paper briefly reviews the structure and function of this new scheme, shows the extension of the scheme for three parallel connected IGBTs and investigates the performance of the new delay time compensation principle for sinusoidal current operation at different cosφ and m_a values as in a converter for drives.

Keywords

compensation; delays; insulated gate bipolar transistors; power convertors; power semiconductor devices; automated delay time compensation; device de-rating; gate unit parameterization; low voltage converters; medium voltage converters; parallel connected IGBT; sinusoidal current operation; Bridge circuits; Current measurement; Delay; Insulated gate bipolar transistors; Integrated circuits; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2012 IEEE

Conference_Location

Raleigh, NC

Print_ISBN

978-1-4673-0802-1

Electronic_ISBN

978-1-4673-0801-4

Type

conf

DOI

10.1109/ECCE.2012.6342165

Filename

6342165