Title :
An EHF Coplanar Monolithic Single Balanced Mixed using Mott Diodes
Author :
Nightingale, S.J. ; Upton, M.A.G. ; Mishra, U.K. ; Palmateer, S.C. ; Smith, P.M.
Author_Institution :
General Electric Company, Electronics Laboratory, Electronics Park, Syracuse NY 13221.
Abstract :
A 30 GHz monolithic low noise balanced mixer has been developed using an integrated "bow tie" antenna/WG transition and low parasitic Mott diodes. The diodes and mixer circuit were developed on General Electric grown MBE material and were fabricated using a plated air bridge technology. Measurements on the diode at DC and RF showed that the zero bias junction capacitance was 0.025 pF and the series resistance was 10 Ohms. A conversion loss of 6 dB was measured at 30 GHz with a 1 GHz IF.
Keywords :
Antenna measurements; Bridge circuits; Capacitance measurement; Diodes; Electric resistance; Electrical resistance measurement; Integrated circuit measurements; Integrated circuit technology; Parasitic capacitance; Radio frequency;
Conference_Titel :
Microwave Conference, 1985. 15th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.1985.333549
