Title :
SEGR in SiO2-Si3N4 stacks
Author :
Javanainen, Arto ; Ferlet-Cavrois, Veronique ; Bosser, Alexandre ; Jaatinen, Jukka ; Kettunen, Heikki ; Muschitiello, Michele ; Pintacuda, Francesco ; Rossi, Mattia ; Schwank, James R. ; Shaneyfelt, Marty R. ; Virtanen, Ari
Author_Institution :
Dept. of Phys., Univ. of Jyvaskyla, Jyvaskyla, Finland
Abstract :
This work presents experimental Single Event Gate Rupture (SEGR) data for Metal-Insulator-Semiconductor (MIS) devices, where the gate dielectrics are made of stacked SiO2-Si3N4 structures. A semi-empirical model for predicting the critical gate voltage in these structures under heavy-ion exposure is first proposed. Then interrelationship between SEGR cross-section and heavy-ion induced energy deposition probability in thin dielectric layers is discussed. Qualitively, a connection between the energy deposition in the dielectric and the SEGR is shown.
Keywords :
MOSFET; probability; radiation hardening (electronics); semiconductor device models; silicon compounds; MIS devices; MOSFETs; SEGR cross-section; SiO2-Si3N4; critical gate voltage prediction; gate dielectrics; heavy-ion exposure; heavy-ion induced energy deposition probability; metal-insulator-semiconductor devices; semiempirical model; single event gate rupture data; thin dielectric layers; Dielectrics; Electric breakdown; Ions; Laboratories; Logic gates; Silicon; MOS; SEGR; Si3N4; SiO2; modeling; semi-empirical;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location :
Oxford
DOI :
10.1109/RADECS.2013.6937443
