DocumentCode :
1993618
Title :
Initial proton damage comparison of an e2v technologies N-channel and P-channel CCD204
Author :
Gow, J.P.D. ; Murray, Neil J. ; Holland, Andrew D. ; Burt, David
Author_Institution :
e2v Centre for Electron. Imaging, Planetary & Space Sci., Open Univ., Milton Keynes, UK
fYear :
2013
fDate :
23-27 Sept. 2013
Firstpage :
1
Lastpage :
5
Abstract :
Comparisons have been made of the relative degradation of charge transfer efficiency in n-channel and p-channel CCDs subjected to proton irradiation. The comparison described in this paper was made using e2v technologies plc. CCD204 devices fabricated using the same mask set. The device performance was compared over a range of temperatures using the same experimental arrangement and technique to provide a like-for-like comparison. The parallel transfer using the p-channel CCD was then optimised using a trap pumping technique to identify the optimal operating conditions at 153 K.
Keywords :
charge exchange; charge-coupled devices; proton effects; semiconductor device manufacture; charge transfer efficiency; e2v technologies N-channel CCD204; e2v technologies P-channel CCD204; proton damage; proton irradiation; temperature 153 K; trap pumping technique; Charge coupled devices; Charge transfer; Clocks; Performance evaluation; Protons; Radiation effects; Temperature measurement; CCD; charge transfer inefficiency; p-channel; pocket/trap pumping; proton radiation damage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location :
Oxford
Type :
conf
DOI :
10.1109/RADECS.2013.6937450
Filename :
6937450
Link To Document :
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