Title :
Experimental study of heavy ion flux impact on single event errors of VLSI for space
Author :
Qingkui Yu ; Lei Luo ; Ming Zhu ; Yi Sun ; Min Tang
Author_Institution :
China Acad. of Space Technol., Beijing, China
Abstract :
The influence of heavy ion flux on single event error of VLSI is tested. It is concluded that the impact of flux on single event error is related to the internal structural design of circuit and program code used.
Keywords :
VLSI; integrated circuit design; integrated circuit testing; ion beam effects; radiation hardening (electronics); VLSI; heavy ion flux impact; integrated circuit testing; internal structural design; single event errors; Application specific integrated circuits; Digital signal processing; Field programmable gate arrays; Single event upsets; Tunneling magnetoresistance; Very large scale integration; VLSI; experiment; flux; heavy ion; single event error;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location :
Oxford
DOI :
10.1109/RADECS.2013.6937458
