DocumentCode
1993773
Title
Experimental study of heavy ion flux impact on single event errors of VLSI for space
Author
Qingkui Yu ; Lei Luo ; Ming Zhu ; Yi Sun ; Min Tang
Author_Institution
China Acad. of Space Technol., Beijing, China
fYear
2013
fDate
23-27 Sept. 2013
Firstpage
1
Lastpage
3
Abstract
The influence of heavy ion flux on single event error of VLSI is tested. It is concluded that the impact of flux on single event error is related to the internal structural design of circuit and program code used.
Keywords
VLSI; integrated circuit design; integrated circuit testing; ion beam effects; radiation hardening (electronics); VLSI; heavy ion flux impact; integrated circuit testing; internal structural design; single event errors; Application specific integrated circuits; Digital signal processing; Field programmable gate arrays; Single event upsets; Tunneling magnetoresistance; Very large scale integration; VLSI; experiment; flux; heavy ion; single event error;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on
Conference_Location
Oxford
Type
conf
DOI
10.1109/RADECS.2013.6937458
Filename
6937458
Link To Document