Nonlinear analysis and design of a mm-wave wideband Doherty power amplifier

Author

Taghian, Fatemeh ; Abdipour, Abdolali ; Mohammadi, Abbas ; Roodaki, Parisa Momen

Author_Institution

Electr. Eng. Dept., Amirkabir Univ. of Technol., Tehran, Iran

fYear

2011

fDate

16-18 Sept. 2011

Firstpage

6003

Lastpage

6006

Abstract

This paper presents the design and nonlinear analysis of a mm-wave wideband Doherty power amplifier at 22 to 29GHz with 7 GHz bandwidth, the design is done using 0.15μm GaAs PHEMT transistor to support a variety of mm-wave applications including point to point digital radio, LMDS/LMCS, ka-band satellite spacecraft and ISM applications. The wideband Doherty power amplifier provides greater than 21dBm of output power across 22-29 GHz, with a typical PAE of 35% and typical gain 15dB over the frequency range. The designed Doherty power amplifier also showed acceptable linearity when induced with two tone signal.

Keywords

HEMT integrated circuits; III-V semiconductors; gallium arsenide; integrated circuit design; millimetre wave power amplifiers; nonlinear network analysis; wideband amplifiers; GaAs; ISM applications; LMDS/LMCS; PHEMT transistor; bandwidth 7 GHz; frequency 22 GHz to 29 GHz; ka-band satellite spacecraft; mm-wave applications; mm-wave wideband Doherty power amplifier; nonlinear analysis; point to point digital radio; size 0.15 mum; two tone signal; Impedance; Linearity; Microwave amplifiers; Power amplifiers; Power generation; Power transmission lines; Wideband; Doherty power amplifier; GaAS PHEMT; millimeter wave; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Control Engineering (ICECE), 2011 International Conference on

Conference_Location

Yichang

Print_ISBN

978-1-4244-8162-0

Type

conf

DOI

10.1109/ICECENG.2011.6058031

Filename

6058031