DocumentCode :
19941
Title :
CMOS hybrid couplers with improved phase inverter structure for D-band applications
Author :
Debin Hou ; Wei Hong ; Wang Ling Goh ; Yong Zhong Xiong ; Arasu, M. Annamalai ; Jixin Chen ; Madihian, Mohammad
Author_Institution :
State Key Lab. of Millimeter Waves, Southeast Univ., Nanjing, China
Volume :
7
Issue :
7
fYear :
2013
fDate :
May 15 2013
Firstpage :
569
Lastpage :
574
Abstract :
This study describes a class of D-band hybrid couplers employing a structurally improved phase inverter in a standard CMOS technology. The proposed phase inverter, which consists of an inverter core and two quasi-parallel striplines along with two slots for impedance matching improvement, is characterised by an equivalent circuit model to facilitate the design procedure. A 180° coupler deploying the phase inverter features 38% size reduction and over 60% bandwidth improvement compared with its conventional counterparts. The proposed rat-race coupler achieves an insertion loss of around 1.1 and 30 dB isolation bandwidth of over 31 GHz, with a peak isolation of 41 dB at 118 GHz. A 90° coupler using the phase inverter demonstrates a return loss and isolation of 14 and 18 dB, respectively, in the whole D-band range. The measured amplitude and phase imbalances for the broadband coupler are, respectively, within 1 dB and 6° from 110 to 160 GHz. Both couplers can be inherently integrated with millimetre-wave circuits for on-chip system applications.
Keywords :
CMOS integrated circuits; equivalent circuits; field effect MIMIC; impedance matching; invertors; millimetre wave couplers; CMOS hybrid couplers; D-band hybrid couplers; broadband coupler; equivalent circuit model; frequency 110 GHz to 160 GHz; impedance matching improvement; loss 14 dB; loss 18 dB; millimetre-wave circuits; on-chip system applications; phase inverter structure; quasi-parallel striplines; rat-race coupler; size reduction; standard CMOS technology;
fLanguage :
English
Journal_Title :
Microwaves, Antennas & Propagation, IET
Publisher :
iet
ISSN :
1751-8725
Type :
jour
DOI :
10.1049/iet-map.2012.0514
Filename :
6552367
Link To Document :
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